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TYPICAL PERFORMANCE CURVES (R)
APT15GP90BDQ1 APT15GP90BDQ1G*
APT15GP90BDQ1(G) 900V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
(R)
TO -2 47
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * SSOA Rated
G
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT15GP90BDQ1(G) UNIT Volts
900 30 43 21 60 60A @ 900V 250 -55 to 150 300
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) I CES I GES Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 350A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25C) Gate-Emitter Leakage Current (VGE = 20V)
2 2
MIN
TYP
MAX
Units
900 3 4.5 3.2 2.7 350 3000 100
A nA
2-2006 050-7497 Rev A
6 3.9
Volts
Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125C)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT15GP90BDQ1(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 450V I C = 15A TJ = 150C, R G = 4.3, VGE = 15V, L = 100H,VCE = 900V Inductive Switching (25C) VCC = 600V VGE = 15V RG = 4.3 I C = 15A VGE = 15V MIN TYP MAX UNIT pF V nC
1100 120 32 7.5 60 10 27 60 9 14 33 55 TBD 430 200 9 14 70 100 TBD 790 500 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V RG = 4.3 I C = 15A
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.50 1.18 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
2-2006 Rev A
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7497
TYPICAL PERFORMANCE CURVES
60 50
V
GE
= 15V
50
APT15GP90BDQ1(G)
V
GE
= 10V
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ = 25C
40 30
40
30
TJ = 25C
20
TJ = 125C
20 10 0
TJ = 125C
10
100
FIGURE 1, Output Characteristics(TJ = 25C)
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
0
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 15A C T = 25C
J
0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
90 IC, COLLECTOR CURRENT (A) 80 70 60 50 40 30 20 10 0 0
VCE = 180V VCE = 450V
8 6 4 2 0 0 10
VCE = 720V
TJ = -55C TJ = 25C TJ = 125C
2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V)
20 30 40 50 GATE CHARGE (nC)
60
70
FIGURE 3, Transfer Characteristics
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6 5 4 3 2 1 0
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 30A IC = 15A
IC = 30A IC = 15A IC = 7.5A
IC = 7.5A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 60
0 -50
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
50 40 30 20 10 0 -50
1.05
1.00
0.95
050-7497
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev A
2-2006
14 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 12 10 8 6 4 2 TJ = 25C, or 125C
35 30 25 20 15 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 5
VCE = 600V RG = 4.3 L = 100H
80 70 60 50 40 30 20
V = 600V 10 RCE= 4.3 G VGE =15V,TJ=25C
APT15GP90BDQ1(G)
VGE = 15V
VGE =15V,TJ=125C
0
35 30 25 20 15 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 5
0
L = 100H
35 30 25 20 15 10 5 0
RG = 4.3, L = 100H, VCE = 600V
120 100
RG = 4.3, L = 100H, VCE = 600V
TJ = 125C, VGE = 15V
tf, FALL TIME (ns)
tr, RISE TIME (ns)
80 60 40 20 0
TJ = 25C, VGE = 15V
TJ = 25 or 125C,VGE = 15V
35 30 25 20 15 10 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
35 30 25 20 15 10 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
2000 EON2, TURN ON ENERGY LOSS (J)
G
TJ = 125C
EOFF, TURN OFF ENERGY LOSS (J)
V = 600V CE V = +15V GE R = 4.3
1200 1000 800 600 400 200 0
= 600V V CE = +15V V GE R = 4.3
G
1500
TJ = 125C
1000
500
TJ = 25C
TJ = 25C
35 30 25 20 15 10 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
0
35 30 25 20 15 10 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
2500 SWITCHING ENERGY LOSSES (J)
J
SWITCHING ENERGY LOSSES (J)
= 600V V CE = +15V V GE T = 125C
2000
Eon2,30A
= 600V V CE = +15V V GE R = 4.3
G
Eon2,30A
2000
1500
1500
Eoff,30A Eon2,15A Eon2,7.5A
1000
Eon2,15A
1000
2-2006
500
Eoff,7.5A
500
Eoff,30A Eon2,7.5A
Eoff,15A
Eoff,15A
Rev A
050-7497
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
0
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
0
Eoff,7.5A
TYPICAL PERFORMANCE CURVES
3,000 1,000 C, CAPACITANCE ( F) 500
P
70 Cies IC, COLLECTOR CURRENT (A) 60 50 40 30 20 10
APT15GP90BDQ1(G)
100 50
Coes
Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.60 0.50 0.40 0.30 0.20 0.10 0
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9 0.7 0.5 0.3 0.1 0.05 10-5 10-4 SINGLE PULSE
Note:
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
210 FMAX, OPERATING FREQUENCY (kHz)
100
RC MODEL Junction temp (C) 0.222 Power (watts) 0.278 Case temperature(C) 0.125 0.00474
50
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50% V = 600V CE R = 4.3
G
F
10 5
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 20 30 40 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
0
050-7497
Rev A
2-2006
APT15GP90BDQ1(G)
APT15DQ100
10% td(on)
Gate Voltage TJ = 125C Collector Current
V CC
IC
V CE
tr
5%
90% 10%
5% Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage
TJ = 125C
tf 10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7497
Rev A
2-2006
TYPICAL PERFORMANCE CURVES
APT15GP90BDQ1(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 126C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 15A Forward Voltage IF = 30A IF = 15A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT15GP90BQDQ1G) UNIT Amps
15 29 80
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.5 3.06 1.92
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 , THERMAL IMPEDANCE (C/W) D = 0.9 1.00 0.80 0.60 0.40 0.20 0 0.7
20 235 185 3 300 810 6 125 1150 19 -
IF = 15A, diF/dt = -200A/s VR = 667V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 15A, diF/dt = -200A/s VR = 667V, TC = 125C
IF = 15A, diF/dt = -1000A/s VR = 667V, TC = 125C
0.5
Note:
PDM
0.3
t1 t2
Z
0.1 0.05 10
-5
SINGLE PULSE 10-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
JC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.676 Power (watts) 0.504 Case temperature (C) 0.0440 0.00147
FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7497
Rev A
2-2006
45 trr, REVERSE RECOVERY TIME (ns) 40 IF, FORWARD CURRENT (A) 35 30 25 20 15 10 5 0 0 TJ = 175C
400 350 300 250 200 150 100 50 15A 30A
APT15GP90BDQ1(G)
T = 125C J V = 667V
R
TJ = 125C TJ = 25C TJ = -55C
7.5A
1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 2000 Qrr, REVERSE RECOVERY CHARGE (nC) 1800 1600 1400 1200 1000 800 600 400 200 0 7.5A 15A
T = 125C J V = 667V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 667V
R
0
30A
30A
20
15
15A
10
7.5A
5
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 trr 0.8 0.6 0.4 0.2 0.0 IRRM Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 35 30 25 IF(AV) (A) 20 15 10 5
Duty cycle = 0.5 T = 175C
J
0
trr
Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature
80 CJ, JUNCTION CAPACITANCE (pF) 70 60 50 40 30 20 10
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
Rev A
2-2006
050-7497
10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage
0
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10035LLL
APT15GP90BDQ1(G)
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) 3.55 (.138) 3.81 (.150) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
4.50 (.177) Max. 0.40 (.016) 0.79 (.031)
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
1.01 (.040) 1.40 (.055)
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7497
Dimensions in Millimeters and (Inches)
Rev A
2-2006
19.81 (.780) 20.32 (.800)
Gate Collector (Cathode) Emitter (Anode)

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